Artificial neural network-based design approach for nanoscale field effect diodes

Autor:	Negin Manavizadeh, F. Karbassian, E. Asl Soleimani, Alireza Khodayari, Farshid Raissi
Rok vydání:	2011
Předmět:	Modeling and simulation Materials science Artificial neural network Computer Science::Neural and Evolutionary Computation Electronic engineering Field effect Nanoscopic scale Diode
Zdroj:	2011 IEEE Nanotechnology Materials and Devices Conference.
DOI:	10.1109/nmdc.2011.6155353
Popis:	In this paper, we have applied artificial neural network (ANN) for modeling and simulation of nanoscale filed effect diodes (FEDs). The simulation is based on ANN model which reduces the computational time while keeping the accuracy of physics-based model. Results of the proposed solution have been compared with the data obtained from the Dessis simulation and show that there is a good agreement between the results with the short computing time.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ea6ea00f20f5af04bd18f60befd61989 https://doi.org/10.1109/nmdc.2011.6155353 Zobrazit plný text záznamu