In-situ analysis of electrochromic thin film devices with Rutherford backscattering spectrometry
| Autor: | Bryant P. Hichwa, J. Gordon H. Mathew |
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| Rok vydání: | 1992 |
| Zdroj: | Optical Interference Coatings. |
| DOI: | 10.1364/oic.1992.ofa1 |
| Popis: | In-situ Rutherford backscattering spectrometry measurements of electrochromic devices were made to better understand their electrochemical performance. 4He++ ions with energies ranging from 2.0 to 5.0 MeV were incident on cycling electrochromic devices. We experimentally determined the changing film composition as a function of the applied device voltage. These results, when combined with transmission electron microscopy data, yield film densities as a function of depth. Significant elemental diffusion was noted in comparison with the as-deposited layer structure. We will also discuss experimental RBS analysis techniques for other complex multilayer thin film devices. |
| Databáze: | OpenAIRE |
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