Electronic structure and energy band offsets for ultrathin silicon nitride on Si(1 0 0)
| Autor: | Hideki Murakami, Masanori Yamaoka, Atushi Suyama, M Narasaki, Seiichi Miyazaki |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Chemistry
Band gap Analytical chemistry General Physics and Astronomy Heterojunction Surfaces and Interfaces General Chemistry Condensed Matter Physics Electron spectroscopy Semimetal Band offset Surfaces Coatings and Films chemistry.chemical_compound X-ray photoelectron spectroscopy Silicon nitride Electronic band structure |
| Zdroj: | Applied Surface Science. 216:252-257 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/s0169-4332(03)00377-5 |
| Popis: | For the interfaces of CVD Si 3 N 4 on Si(1 0 0) and directly-nitrided Si(1 0 0), chemical bonding features, energy band offsets and defect state density distributions have been studied using high-resolution X-ray photoelectron spectroscopy and total photoelectron yield spectroscopy. At nitride–Si(1 0 0) interfaces, SiN bonding states in which each Si atom is bonded with one or three N atoms are formed predominantly, being presumably related to the structural strain induced by SiN bonding at the interface. For nearly stoichiometric SiN x ( x ≥1.3) in the thickness range of 1.0–17 nm which was prepared by 750 °C CVD or 700 °C direct-nitridation, the energy band gap was determined to be 5.4±0.1 eV from the energy loss spectra of N 1s photoelectrons. By analyzing the valence band spectra of thin SiN x /Si(1 0 0) heterostructures, the valence band offset between such SiN x and Si(1 0 0) was obtained to be 1.9±0.1 eV. For the direct-nitridation of Si(1 0 0) at 600 or 700 °C, an interface state density as low as ∼10 10 eV −1 cm −2 near Si midgap was confirmed by total photoelectron yield measurements. |
| Databáze: | OpenAIRE |
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