Implementation of total dose effects in the bipolar junction transistor Gummel-Poon model
| Autor: | P. Calvel, Andre Touboul, R. Briand, Pascal Fouillat, Ronald D. Schrimpf, X. Montagner, M.C. Calvet, Kenneth F. Galloway |
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| Rok vydání: | 1997 |
| Předmět: |
Nuclear and High Energy Physics
Engineering Mathematical model business.industry Transistor Bipolar junction transistor Spice Gummel–Poon model law.invention Nuclear Energy and Engineering law Total dose Electronic engineering Electrical and Electronic Engineering business Algorithm Root-mean-square deviation Electronic circuit |
| Zdroj: | IEEE Transactions on Nuclear Science. 44:1922-1929 |
| ISSN: | 1558-1578 0018-9499 |
| Popis: | The effects of total dose on the SPICE model of bipolar junction transistors are investigated. The limitations of the standard Gummel-Poon model for simulating the radiation-induced excess base current are analyzed, and a new model based on an empirical approach is proposed. Four new SPICE rad-parameters are presented, and investigated for different dose rates. The relevant parameters are extracted using a new algorithmic procedure, combining a genetic approach and the standard optimization technique which minimizes the RMS error between measured and simulated excess base current. It is shown that the excess base current is accurately described by the same formula whatever the device type is. An empirical fitting of the rad-parameters as a function of total dose is proposed to use in hardening electronic circuits for space-like environments. |
| Databáze: | OpenAIRE |
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