Infra-red microscopy of Cd(Zn)Te radiation detectors revealing their internal electric field structure under bias
| Autor: | Frank J. W. Podd, P. De Antonis, Edward James Morton |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Physics
Nuclear and High Energy Physics Laser diode business.industry Detector Particle detector Pockels effect law.invention Photodiode Semiconductor detector Optics Nuclear Energy and Engineering law Electric field Optoelectronics Electrical and Electronic Engineering business Light-emitting diode |
| Zdroj: | IEEE Transactions on Nuclear Science. 43:1487-1490 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/23.507089 |
| Popis: | This paper describes the use of the Pockels electro-optic effect to both visualise and measure the internal electric field present within CdZnTe detectors under normal bias conditions. Use was made of a silicon charge coupled device (CCD), as an image sensor, in conjunction with a 940 nm LED to illuminate a 3/spl times/3/spl times/5 mm detector crystal with polarised infra-red light. The experiment was arranged so that a /spl times/40 image of the crystal showing a contour plot of electric field intensity could be generated. Further, more precise E-field measurements, were obtained using a 1.2 /spl mu/m laser diode (LD) and a germanium photodiode detector. Together these experiments indicate substantially non-uniform electric fields within the detector crystals used. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|