| Autor: |
Atsushi Nakamura, G. Tabares, E. Muñoz, Adrian Hierro, S.K. Mohanta, Jiro Temmyo, A. Guzmán |
| Rok vydání: |
2013 |
| Předmět: |
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| Zdroj: |
Thin Solid Films. 548:539-545 |
| ISSN: |
0040-6090 |
| DOI: |
10.1016/j.tsf.2013.09.007 |
| Popis: |
We report the selection of materials and orientations on characteristics of MgZnO:N based Schottky junctions. The Schottky contacts were fabricated to both polar and nonpolar films with Pt and poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) electrodes including surface treatments such as isopropyl alcohol (IPA), hydrochloric acid (HCl), hydrogen peroxide (H 2 O 2 ), and 3-aminopropyltriethoxysilane (APS). The IPA and HCl treated Pt/MgZnO:N junctions showed Ohmic behavior. The H 2 O 2 treated Pt/MgZnO:N diode showed Schottky behavior for both polar and nonpolar films. The PEDOT:PSS/MgZnO:N diodes showed rectifying characteristics for all surface treatment conditions. The PEDOT:PSS/MgZnO:N Schottky showed minimum current at negative (− Ve) voltage in current density–voltage (J–V) curves with a highest shift of − 0.4 V for HCl treated polar film and a low shift of − 0.05 V for APS treated nonpolar film. The J–V characteristics of PEDOT:PSS/polar ZnO single crystal with Zn- and O-faces demonstrated that the − Ve voltage shift of minimum current was due to the dipole formation at the interface. The time-lapse J–V curves in dark situation showed enhance − Ve voltage shift for polar c -MgZnO:N, and the dipole effect is weak for nonpolar a -MgZnO:N. The dipole effect in the PEDOT:PSS/polar MgZnO:N Schottky diode was further discussed with energy band diagram. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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