Lifetime improvement of organic light-emitting diodes using silicon oxy-nitride as anode modifier
| Autor: | Chun-Sing Lee, Shuit-Tong Lee, W.M. Tsang, C.O Poon, Shiu-Lun Lai, Tsz-Wai Ng, Michael C. Y. Chan, Man-Keung Fung, F.L. Wong, K.H Lai |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
Silicon Metals and Alloys Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Sputter deposition Surfaces Coatings and Films Electronic Optical and Magnetic Materials Anode Indium tin oxide chemistry.chemical_compound chemistry Silicon nitride Physical vapor deposition Materials Chemistry OLED Thin film |
| Zdroj: | Thin Solid Films. 516:8195-8198 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2008.04.028 |
| Popis: | Silicon oxy-nitride (SiO x N y ) films prepared by radio-frequency magnetron sputtering were investigated as an anode modifier in organic light-emitting diodes (OLEDs). SiO x N y films were deposited on the indium tin oxide (ITO) anode of an OLED with a configuration of ITO/SiO x N y /α-naphtylphenyliphenyl diamine (NPB)/8-hydroxyquinoline aluminum (AlQ)/Mg:Ag. By varying the argon and oxygen flow ratio during deposition of the SiO x N y films, devices with improved electroluminescent performance and operation lifetime were obtained. Atomic compositions of the SiO x N y films were analyzed with X-ray photoelectron spectroscopy. The best device with the optimized SiO x N y film showed a half brightness lifetime 5 times better than that of the control device. |
| Databáze: | OpenAIRE |
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