Autor: |
Masayuki Tanaka, Tatsuro Jyoukawa, Maho Ohara, Tatsushi Hamaguchi, Hironobu Narui, Noriko Kobayashi, Tatsuya Matou, Hideki Watanabe, Kentaro Hayashi, Rintaro Koda, Kentaro Fujii, Hiroshi Nakajima, Ito Masamichi |
Rok vydání: |
2018 |
Předmět: |
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Zdroj: |
2018 IEEE International Semiconductor Laser Conference (ISLC). |
DOI: |
10.1109/islc.2018.8516154 |
Popis: |
The recent progress in GaN-based vertical-cavity surface-emitting lasers (VCSELs) having dielectric distributed Bragg reflectors, including the device characteristics of GaN-based VCSELs with a newly proposed cavity structure incorporating an atomically smooth curved mirror, is overviewed. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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