Microstructure and Composition of Surface Layers Formed by Ion Implantation of Nitrogen in High-Purity Aluminum
Autor: | H. K. Plummer, Robert Corbly Mccune, F. W. Kunz, W. T. Donlon, Louis Toth |
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Rok vydání: | 1988 |
Předmět: | |
Zdroj: | MRS Proceedings. 100 |
ISSN: | 1946-4274 0272-9172 |
DOI: | 10.1557/proc-100-157 |
Popis: | Surface layers with overall thickness + or N2+ at energies of 50 or 100 keV in 99.99% pure aluminum. These surfaces were characterized by scanning and transmission electron microscopy, Auger electron spectroscopy, Rutherford backscattering, nuclear reaction analysis and particle-induced X-ray analysis. At doses above 2×1017 N2/cm2 , blistering of the surfaces was observed along with a reduction in the extent of the coulometric dose retained by the material. Oxygen is believed to be introduced into the near-surface region by a process of reaction and ion-beam mixing, as well as possible CO contamination of the beam. A phase, isostructural with AlN, forms semi-coherently with parent aluminum grains, however, some fraction of the metallic aluminum phase remains in the reaction layer, even at overall nitrogen contents which exceed the stoichiometry of AlN. |
Databáze: | OpenAIRE |
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