UV-C Lasing From AlGaN Multiple Quantum Wells on Different Types of AlN/Sapphire Templates
| Autor: | Markus Weyers, Joerg Jeschke, Tim Wernicke, Martin Martens, V. Kueller, Arne Knauer, Michael Kneissl, Christian Kuhn, Christoph Reich, Ute Zeimer, Felix Krueger, Carsten Netzel |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
Photoluminescence business.industry Wide-bandgap semiconductor Physics::Optics Epitaxy Laser Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Optical pumping Condensed Matter::Materials Science law Sapphire Optoelectronics Electrical and Electronic Engineering Dislocation business Lasing threshold |
| Zdroj: | IEEE Photonics Technology Letters. 27:1969-1972 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/lpt.2015.2448127 |
| Popis: | AlGaN multiple quantum well lasers for optical pumping have been grown by metal-organic vapor phase epitaxy on high and low dislocation density AlN/sapphire templates. Lasers on planar templates exhibited high dislocation densities and high V-pit densities, but a smooth surface morphology leading to inefficient, but laterally very homogeneous optical emission. Lasing was not observed when optically pumped with up to 50 MW/cm2. Epitaxially laterally overgrown templates on patterned sapphire showed much lower dislocation densities, but also step bunching on the surface. This resulted in good photoluminescence efficiencies of up to 20%, but also in a higher lateral inhomogeneity of the emission. Lasers on these templates exhibited lasing at $\sim 240$ nm with low full-width at half-maximum of 1 nm and threshold power densities of 11–15 MW/cm2. |
| Databáze: | OpenAIRE |
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