Design and Analysis of a DC–43.5-GHz Fully Integrated Distributed Amplifier Using GaAs HEMT–HBT Cascode Gain Stage
| Autor: | Hong-Yeh Chang, Yeh-Liang Yeh, Yu-Chi Wang, Chi-Hsien Lin, Shou-Hsien Weng, Yu-Cheng Liu |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Engineering
Radiation business.industry Heterojunction bipolar transistor Transistor Distributed amplifier Electrical engineering High-electron-mobility transistor Condensed Matter Physics Noise figure law.invention law Cascode Electrical and Electronic Engineering Gain stage business Monolithic microwave integrated circuit |
| Zdroj: | IEEE Transactions on Microwave Theory and Techniques. 59:443-455 |
| ISSN: | 1557-9670 0018-9480 |
| DOI: | 10.1109/tmtt.2010.2092786 |
| Popis: | Design and analysis of a dc-43.5-GHz fully integrated distributed amplifier (DA) using a GaAs high electron-mobility transistor (HEMT) heterojunction bipolar transistor (HBT) cascode gain stage is presented in this paper. The proposed DA is fabricated in a stacked 2-μm InGaP/GaAs HBT, 0.5-μm AlGaAs/GaAs enhancement- and depletion-mode HEMT monolithic microwave integrated circuit technology. A modified m -derived network and an HEMT-HBT cascode amplifier with inductive peaking technique are investigated to enhance the bandwidth of the DA. The bias networks of the DA are fully integrated in a single chip without off-chip bias-T or bias components. The measured average small-signal gain is 8.5 dB. The measured minimum noise figure is 4.2 dB. The measured maximum output 1-dB compression point (P1 dB) and the maximum output third-order intercept point are 8 and 18 dBm, respectively. Moreover, the DA is successfully evaluated with an eye diagram measurement, and demonstrates good transmission quality. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|