Comments on '1.88-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ 1650-V Normally on 4H-SiC TI-VJFET

Autor:	V Veliadis
Rok vydání:	2010
Předmět:	Physics Vertical channel business.industry Power switching Electrical engineering Normally off Electrical and Electronic Engineering business Electronic systems Omega Electronic Optical and Magnetic Materials
Zdroj:	IEEE Transactions on Electron Devices. 57:3540-3543
ISSN:	1557-9646 0018-9383
Popis:	The discussion section of paper “1.88-mΩ·cm2 1650-V Normally on 4H-SiC TI-VJFET” which appeared in IEEE Transactions on Electron Devices, vol. 55, no. 8, August 2008, offers a comparative analysis between TI-VJFETs fabricated at USCI/Rutgers and VJFETs (SITs) fabricated at Northrop Grumman Electronic Systems (NGES) for power switching applications. I have a number of issues with this analysis which I wish to highlight. In addition, this paper claims VJFET performance records, which are dubious as they are based on on-resistance values obtained under bipolar operation and on blocking-voltages quoted at unspecified drain-current densities.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ea2c6388d66a3fde02034c9c7fbecf0e https://doi.org/10.1109/ted.2010.2079172 Zobrazit plný text záznamu