Heterogeneity and photoconductivity kinetics in amorphous hydrogenated silicon

Autor:	K. V. Kougia, E. I. Terukov, V. Fus
Rok vydání:	1998
Předmět:	Materials science Silicon business.industry Photoconductivity Kinetics technology industry and agriculture chemistry.chemical_element equipment and supplies Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Condensed Matter::Disordered Systems and Neural Networks Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Amorphous solid Condensed Matter::Materials Science Flash (photography) Semiconductor chemistry Optoelectronics business Recombination Quantum tunnelling
Zdroj:	Semiconductors. 32:1131-1133
ISSN:	1090-6479 1063-7826
DOI:	10.1134/1.1187544
Popis:	A model of the decay kinetics of photoconductivity in amorphous hydrogenated silicon, in which recombination of excess carriers is assumed to occur via tunnelling, is proposed. It is shown that study of the decay shape after flash illumination can be a very effective way to detect structural inhomogeneities in amorphous or disordered semiconductors.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ea210a62399c39692185c9a3f0a42aa0 https://doi.org/10.1134/1.1187544 Zobrazit plný text záznamu Plný text ve formátu PDF