Assessment of Surface Damage of Gallium Arsenide due to Reactive Ion Etching

Autor:	K. P. Hilton, Dietrich R. T. Zahn, U. Rossow, W. Richter, D.V. Morgan, H. Thomas, J. Woodward, M. S. Puttock
Rok vydání:	1990
Předmět:	Materials science Analytical chemistry Schottky diode Plasma Gallium arsenide Crystal chemistry.chemical_compound symbols.namesake chemistry Surface roughness symbols Spectroscopic ellipsometry Reactive-ion etching Raman spectroscopy
Zdroj:	MRS Proceedings. 190
ISSN:	1946-4274
DOI:	10.1557/proc-190-255
Popis:	Crystal damage of GaAs(100) caused by Reactive Ion Etching (RIE) using a mixture of Cl2 and Ar gas has been assessed using Surface Roughness (Ra), Resonant Raman Spectroscopy (RRS), Schottky diodes, and Spectroscopic Ellipsometry (SE). Plasma conditions for minimum induced damage have been determined and compared to optimised RIE processes using plasma gases SiCl4, CH4-H2, CCl2F2 and Ar. The SiCl4 plasma was found to produce the least crystal damage.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e9fbb0c18fa0295615cab3ffa7ef563a https://doi.org/10.1557/proc-190-255 Zobrazit plný text záznamu Full text from SpringerLink