Microscopic defects in silicon induced by zinc out-diffusion
| Autor: | Hartmut Bracht, A. Giese, D. Baither, Nicolaas Stolwijk |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Supersaturation
Materials science Silicon Mechanical Engineering Nucleation Analytical chemistry chemistry.chemical_element Zinc Atmospheric temperature range Condensed Matter Physics Crystallographic defect Crystallography chemistry Mechanics of Materials Transmission electron microscopy Vacancy defect General Materials Science |
| Zdroj: | Materials Science and Engineering: B. 71:160-165 |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/s0921-5107(99)00367-0 |
| Popis: | We have performed Zn out-diffusion experiments in homogeneously Zn-doped Si in the temperature range from 850 to 1207°C. Diffusion profiles of Zn measured by spreading-resistance profiling are accurately described on the basis of the simultaneous occurrence of the kick-out and the dissociative diffusion mechanisms. Compared to Zn in-diffusion, Zn out-diffusion tends to be dominated by the dissociative mechanism, i.e. preferentially in regions of high Zn concentration. Numerical modeling of the out-diffusion profiles yields fairly reliable data for the vacancy transport coefficient C V eq D V . In contrast, an accurate determination of the vacancy equilibrium concentrations C V eq presumably suffers from vacancy agglomerates whose formation is driven by the vacancy supersaturation arising from the dissociative out-diffusion of Zn. Microscopic defects decorated with Cu 3 Si have been detected after the out-diffusion process by preferential etching and transmission electron microscope analysis. A tentative explanation for the observed Cu 3 Si precipitates invokes their nucleation on vacancy clusters. |
| Databáze: | OpenAIRE |
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