Characteristics of In0.52Al0.48As/InxGa1−xAs HEMT’s with various InxGa1−xAs channels
| Autor: | Yen-Wei Chen, Wei-Chou Hsu, Rong-Tay Hsu, Yue-Huei Wu, Yeong-Jia Chen |
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| Rok vydání: | 2004 |
| Předmět: |
Electron mobility
X-ray absorption spectroscopy Materials science business.industry Transconductance High-electron-mobility transistor Chemical vapor deposition Condensed Matter Physics Electronic Optical and Magnetic Materials Barrier layer Materials Chemistry Optoelectronics Electrical and Electronic Engineering Current (fluid) business AND gate |
| Zdroj: | Solid-State Electronics. 48:119-124 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/s0038-1101(03)00287-9 |
| Popis: | High-linearity In0.52Al0.48As/InxGa1−xAs HEMT’s have been successfully fabricated by low-pressure metal organic chemical vapor deposition (LP-MOCVD). The studied devices exhibit high transconductance, low leakage current, high breakdown, and high-linearly operational regime due to good carrier confinement well as the low temperature growth In0.52Al0.48As barrier layer significantly suppresses buffer leakage current. Experimentally, linear operation current regime and gate voltage swing are improved in the structure utilizing a compositionally graded InxGa1−xAs channel due to the compositionally graded InxGa1−xAs channel enhance the device carrier mobility and confinement. An extrinsic transconductance as high as 302 mS/mm at gate length of 1.5 μm is achieved for the In0.6Ga0.4As channel structure. |
| Databáze: | OpenAIRE |
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