Numerical simulation of submicrometer devices including coupled nonlocal transport and nonisothermal effects
| Autor: | Y. Apanovich, R. Cottle, E. Lyumkis, B. Polsky, A. Tcherniaev, A. Shur, P. Blakey |
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| Rok vydání: | 1995 |
| Předmět: |
Materials science
business.industry Transistor Bipolar junction transistor Silicon on insulator Heterojunction Mechanics Semiconductor device Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Electronic Optical and Magnetic Materials law.invention Semiconductor law MOSFET Electronic engineering Charge carrier Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 42:890-898 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/16.381985 |
| Popis: | Stratton's energy balance model for nonlocal charge transport in semiconductors is extended to include the effects of heterojunctions and lattice heating. The extended model is implemented in a general purpose 2D device simulator. Calculated results are presented for three device types and each of four models. The devices are a silicon BJT, a silicon SOI transistor, and a GaAs/AlGaAs HBT. The models are isothermal drift-diffusion, nonisothermal drift-diffusion, isothermal energy balance, and nonisothermal energy balance. Analysis of these results provides detailed insights into the impact of the coupling between carrier transport and lattice heating. > |
| Databáze: | OpenAIRE |
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