Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices
| Autor: | Anthony T. Wong, Philip D. Rack, Amanda Haglund, Joo Hyon Noh, Pushpa Raj Pudasaini, David Mandrus, Thomas Z. Ward, Olga S. Ovchinnikova, Sheng Dai |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Oxide Nanotechnology 02 engineering and technology Substrate (electronics) 010402 general chemistry 01 natural sciences law.invention Biomaterials chemistry.chemical_compound law Electrochemistry Thin film business.industry Transistor 021001 nanoscience & nanotechnology Condensed Matter Physics Flexible electronics 0104 chemical sciences Electronic Optical and Magnetic Materials Amorphous solid Semiconductor chemistry Thin-film transistor 0210 nano-technology business |
| Zdroj: | Advanced Functional Materials. 26:2820-2825 |
| ISSN: | 1616-301X |
| DOI: | 10.1002/adfm.201505274 |
| Popis: | Amorphous metal-oxide semiconductors offer the high carrier mobilities and excellent large-area uniformity required for high performance, transparent, flexible electronic devices; however, a critical bottleneck to their widespread implementation is the need to activate these materials at high temperatures which are not compatible with flexible polymer substrates. The highly controllable activation of amorphous indium gallium zinc oxide semiconductor channels using ionic liquid gating at room temperature is reported. Activation is controlled by electric field-induced oxygen migration across the ionic liquid-semiconductor interface. In addition to activation of unannealed devices, it is shown that threshold voltages of a transistor can be linearly tuned between the enhancement and depletion modes. Finally, the first ever example of transparent flexible thin film metal oxide transistor on a polyamide substrate created using this simple technique is demonstrated. This study demonstrates the potential of field-induced activation as a promising alternative to traditional postdeposition thermal annealing which opens the door to wide scale implementation into flexible electronic applications. |
| Databáze: | OpenAIRE |
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