Deep, vertical etching for GaAs using inductively coupled plasma/reactive ion etching
| Autor: | Christopher Jones, Andrew Blakers, Matthew Stocks, Katherine Booker, Yahuitl Osorio Mayon |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Microelectromechanical systems Materials science business.industry Process Chemistry and Technology High selectivity RF power amplifier 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Etching (microfabrication) 0103 physical sciences Materials Chemistry Optoelectronics Gas composition Electrical and Electronic Engineering Reactive-ion etching Inductively coupled plasma 0210 nano-technology business Anisotropy Instrumentation |
| Zdroj: | Journal of Vacuum Science & Technology B. 38:012206 |
| ISSN: | 2166-2754 2166-2746 |
| Popis: | Deep etched structures in GaAs have many applications in optoelectronics and MEMS devices. These applications often require an anisotropic etch profile with smooth sidewalls as well as a high etch rate and high aspect ratio. Developing an etch process that demonstrates high selectivity for the etch mask is critical as etch times for deep grooves can be protracted due to the effect of RIE lag. In this work, the authors describe etching deep, vertical grooves in GaAs using Inductively Coupled Plasma/Reactive Ion Etching. The effects of RF power, pressure, and gas composition on mask selectivity, etch rate, and anisotropy are discussed. Using a SiO2 etch mask and Cl2 as the main etchant gas, grooves with a vertical sidewall and depths of >120 μm (aspect ratio of 9) have been achieved. |
| Databáze: | OpenAIRE |
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