A comparative study of metal-ferroelectric-metal devices using doped- and stacked-hafnium zirconium oxides
| Autor: | Chun-Hu Cheng, Shih An Wang, Yu Chi Fan, Zhi Wei Zheng, Tsung Ming Lee, Hsiu Ming Liu, Chien Liang Lin, Sheng Lee, Wei-Dong Liu, Hsiao-Hsuan Hsu, Zi You Huang |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Annealing (metallurgy) chemistry.chemical_element 02 engineering and technology 01 natural sciences law.invention law 0103 physical sciences Process integration Thermal Materials Chemistry 010302 applied physics Zirconium business.industry Doping Metals and Alloys Surfaces and Interfaces 021001 nanoscience & nanotechnology Ferroelectricity Surfaces Coatings and Films Electronic Optical and Magnetic Materials Hafnium Capacitor chemistry Optoelectronics 0210 nano-technology business |
| Zdroj: | Thin Solid Films. 701:137927 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2020.137927 |
| Popis: | To understand the effect of deposition sequence of ferroelectric HfZrO, we investigated the ferroelectric polarization characteristics of a 50%-zirconium-doped HfZrO and a stacked HfZrO metal-ferroelectric-metal capacitors. Based on experimental results, we find that the leakage current can be effectively suppressed in stacked HfZrO film. The film stack structure is favorable for simultaneously stabilizing the ferroelectric polarization and minimizing the generation of interface defect traps during the post-metal annealing process with a thermal budget of 600 – 800 °C, which is favorable for complementary-metal-oxide-semiconductor frond- and back-end process integration with various thermal budget requirement. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect