Features of the Upsurge in Drift Velocity of Electrons in DA-pHEMT
| Autor: | V. M. Lukashin, Ya. B. Martynov, S. I. Novikov, A. B. Pashkovskii, V. G. Lapin |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Physics Drift velocity Physics and Astronomy (miscellaneous) Condensed matter physics Doping Transistor Heterojunction 02 engineering and technology Electron High-electron-mobility transistor Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology 01 natural sciences law.invention Condensed Matter::Materials Science law 0103 physical sciences Phenomenological model 0210 nano-technology Quantum well |
| Zdroj: | Technical Physics Letters. 44:804-807 |
| ISSN: | 1090-6533 1063-7850 |
| Popis: | A simple phenomenological model for estimating the upsurge in drift velocity of electrons in transistor heterostructures is proposed. This model is based on a self-consistent solution of Schrodinger and Poisson equations and the hydrodynamic system of equations of energy and momentum conservation. It is demonstrated that the conditions in the layer channel of DA-pHEMT structures with additional potential barriers, which are produced by donor–acceptor doping and enhance the localization of hot electrons, are even more conducive to reducing the time of flight of electrons under the gate than those established in heterostructures with deeper quantum wells produced by increasing the conduction band offset at the heterojunction interface. |
| Databáze: | OpenAIRE |
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