Optical detection of asymmetric quantum-dot molecules in double-layer InAs/GaAs structures

Autor: Georgiy G. Tarasov, Gregory J. Salamo, Zh. M. Wang, T. Warming, Heiko Kissel, M. P. Lisitsa, Yu. I. Mazur, Z. Ya. Zhuchenko, Dieter Bimberg
Rok vydání: 2006
Předmět:
Zdroj: Semiconductors. 40:79-83
ISSN: 1090-6479
1063-7826
DOI: 10.1134/s1063782606010143
Popis: Self-assembled quantum dots (QDs) in double-layer InAs/GaAs structures are studied by resonant photoluminescence and photoluminescence excitation spectroscopy. A weakly correlated (50%) double-layer system with an array of vertically coupled QDs (asymmetric quantum-dot molecules) was formed in a structure consisting of the 1.8-monolayer-thick first and the 2.4-monolayer-thick second InAs layers separated by 50 monolayers of GaAs. The nature of discrete quantum states in this system was studied and resonances corresponding to vertically coupled QDs were clearly observed for the first time.
Databáze: OpenAIRE