Theory of resonant tunnelling between 2D electron systems
| Autor: | G A Toombs, F.W. Sheard |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Physics
Condensed matter physics Bistability business.industry Heterojunction Charge (physics) Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials Semiconductor Materials Chemistry Electrical and Electronic Engineering Quantum tunnelling composite business Quantum well Quantum tunnelling |
| Zdroj: | Semiconductor Science and Technology. 7:B460-B461 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/7/3b/119 |
| Popis: | The transfer Hamiltonian method is used to study tunnelling between the subbands of barrier-separated 2D electron systems. Application of the theory is made to a double-barrier semiconductor heterostructure in which a 2D accumulation layer is formed under bias. A region of bistability is found in the voltage dependence of the charge stored in the quantum well and in the accumulation layer. Comparison is made with magneto-oscillation studies of asymmetric double-barrier structures. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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