Improved Performance of the Al2O3-Protected HfO2–TiO2 Base Layer with a Self-Assembled CH3NH3PbI3 Heterostructure for Extremely Low Operating Voltage and Stable Filament Formation in Nonvolatile Resistive Switching Memory
| Autor: | Vadivel Murugan, Twinkle George |
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| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | ACS Applied Materials & Interfaces. 14:51066-51083 |
| ISSN: | 1944-8252 1944-8244 |
| Databáze: | OpenAIRE |
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