Radiation-Tolerant, Sidewall-Hardened SOI/MOS Transistors
| Autor: | S. S. Tsao, George K. Celler, Daniel M. Fleetwood, H. T. Weaver, Loren Pfeiffer |
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| Rok vydání: | 1987 |
| Předmět: |
Nuclear and High Energy Physics
Materials science business.industry Transistor Silicon on insulator Semiconductor device law.invention Threshold voltage Nuclear Energy and Engineering law MOSFET Electronic engineering Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Radiation hardening Electronic circuit |
| Zdroj: | IEEE Transactions on Nuclear Science. 34:1686-1691 |
| ISSN: | 0018-9499 |
| DOI: | 10.1109/tns.1987.4337537 |
| Popis: | Total dose radiation effects were measured for sidewall-hardened n-channel SOI/MOS transistors, fabricated in zone-melt-recrystallized (ZMR) and oxygen-implanted (SIMOX) SOI materials. We compare the radiation responses of transistors with three types of sidewall or edge configurations: island transistors with passivated edges, island transistors without passivated edges, and edgeless (enclosed-gate) transistors. Data from these three test devices allow clear separation of front-, back-, and edge-channel conduction. Passivated edge channels were hard to Co-60 doses in excess of 24 Mrad(Si). The overall hardness of the passivated-edge transistors is limited only by the radiation-induced threshold voltage shifts (about -1 V at 1.0 Mrad) of the top channel. No significant differences in total-dose response of ZMR and SIMOX devices were observed under the radiation conditions employed. |
| Databáze: | OpenAIRE |
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