Fine-structure N-polarity InN∕InGaN multiple quantum wells grown on GaN underlayer by molecular-beam epitaxy

Autor:	Takeyoshi Matsuda, Hirotatsu Ishii, Yoshihiro Ishitani, Seikoh Yoshida, Song-Bek Che, Wataru Terashima, Akihiko Yoshikawa
Rok vydání:	2005
Předmět:	Diffraction Photoluminescence Materials science Physics and Astronomy (miscellaneous) Condensed matter physics business.industry Wide-bandgap semiconductor Barrier layer Transmission electron microscopy X-ray crystallography Optoelectronics business Quantum well Molecular beam epitaxy
Zdroj:	Applied Physics Letters. 86:261903
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.1954877
Popis:	We have succeeded in the growth of very-fine-structure InN∕InGaN (3–16nm∕9nm) multi-quantum wells (MQWs) on GaN underlayer and characterized them by transmission electron microscopy (TEM), high-resolution x-ray diffraction (XRD), and photoluminescence (PL) at 13K. Clear satellite diffraction peaks and sharp heterointerfaces were observed by XRD and TEM, respectively. A single PL-emission peak at 1.75μm was observed in the ten-periods InN(16.1nm)∕In0.67Ga0.33N(9.2nm) MQWs. The use of the InGaN as a barrier layer instead of GaN resulted in remarkable reduction of lattice mismatch between the well and barrier, which was essential for the fabrication of MQWs with superior interface quality. This successful growth of fine-structure InN∕InGaN MQWs would be an important step for the application of InN in optical communication devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e9c43ee69ecb596ccc965978e8360197 https://doi.org/10.1063/1.1954877 Zobrazit plný text záznamu