Dielectric properties of single crystalline PrO2(111)/Si(111) heterostructures: Amorphous interface and electrical instabilities

Autor:	G. Weidner, J. Dabrowski, Peter Zaumseil, Ch. Walczyk, H.-J. Müssig, Thomas Schroeder, G. Lupina, Olaf Seifarth
Rok vydání:	2009
Předmět:	Materials science Silicon chemistry Absorption spectroscopy X-ray photoelectron spectroscopy Band gap Analytical chemistry Wide-bandgap semiconductor General Physics and Astronomy chemistry.chemical_element Heterojunction Dielectric Amorphous solid
Zdroj:	Journal of Applied Physics. 106:104105
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.3259411
Popis:	Single crystalline PrO2(111)/Si(111) heterostructures are flexible buffers for global Ge integration on Si. A combined materials science–electrical characterization is carried out to study the influence of postdeposition annealing in 1 bar oxygen at 300–600 °C on the dielectric properties of PrO2(111)/Si(111). The materials science transmission electron microscopy and x-ray reflectometry studies reveal that postdeposition oxidation of the PrO2(111)/Si(111) boundary results in an amorphous interface (IF) layer, which grows in thickness with temperature. Nondestructive depth profiling synchrotron radiation-based x-ray photoelectron spectroscopy and x-ray absorption spectroscopy methods demonstrate that this amorphous IF layer is composed of two Pr-silicate phases, namely, with increasing distance from Si, a SiO2-rich and a SiO2-poor Pr silicate. The electronic band offset diagram shows that the wide band gap dielectric Pr silicate results in higher band offsets with respect to Si than the medium band gap di...
Databáze:	OpenAIRE
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