Defects in Si/SiO2 structures introduced by sputter metallization
| Autor: | S. Alexandrova, A. Szekeres, K. I. Kirov |
|---|---|
| Rok vydání: | 1981 |
| Předmět: |
Materials science
business.industry Annealing (metallurgy) Band gap Metals and Alloys Oxide Surfaces and Interfaces Sputter deposition Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Planar chemistry Sputtering Cavity magnetron Materials Chemistry Optoelectronics business Diode |
| Zdroj: | Thin Solid Films. 75:37-46 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/0040-6090(81)90390-4 |
| Popis: | A comparative study of MOS structures metallized in planar and cylindrical magnetron systems and in a conventional d.c. diode sputtering system was conducted. In all cases the influence of the discharge led to distortion and hysteresis in high frequency C-V curves owing to the generation of neutral traps spatially distributed in the oxide. The effective concentration of the traps was about 1.4 × 1012 eV−1cm−2 in the central part of the band gap. These defects can easily be removed by conventional low temperature annealing. The necessity of post-metallization annealing of MOS structures prepared in magnetron systems can be avoided if the substrates are isolated from ground and heated to 300 °C during the sputter deposition of the metal layer. |
| Databáze: | OpenAIRE |
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