Photoenhanced reactive ion etching of III–V nitrides in BCl3/Cl2/Ar/N2 plasmas
| Autor: | Abdelhak Bensaoula, D. Starikov, Nacer Badi, A. Tempez, I. Berishev, N. Medelci |
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| Rok vydání: | 1999 |
| Předmět: |
Materials science
Wide-bandgap semiconductor Analytical chemistry Gallium nitride Surfaces and Interfaces Nitride Condensed Matter Physics Surfaces Coatings and Films law.invention chemistry.chemical_compound chemistry law Etching (microfabrication) Boron nitride Xenon arc lamp Thin film Reactive-ion etching |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:2209-2213 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.581748 |
| Popis: | Gallium nitride (GaN) and boron nitride (BN) are known as superior semiconductor materials for UV optoelectronic and high power, high temperature applications. As a result of their high molecular bond strength these materials are extremely difficult to etch. In this article, reactive ion etching (RIE) tests were performed on GaN and BN thin films using respectively BCl3/Cl2/Ar and Cl2/Ar chemistries. In order to improve the etch rates at lower rf powers and thus reduce ion bombardment-induced damage, a photoassisted RIE process was investigated. The same plasma chemistries in combination with a xenon arc lamp were utilized. In an attempt to minimize surface nitrogen depletion, N2 was used instead of Ar as dilution gas. Photoenhancement was observed for both GaN and BN etching. As expected, the etch rate increased with rf power for both unassisted and photoassisted etching conditions. The combination of illumination and N2 led to a nitrogen-rich surface for GaN. In the case of BN, photoassisted etching in ... |
| Databáze: | OpenAIRE |
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