Thermal and field-rate dependence of multi-step magnetization switching of synthetic antiferromagnetic multilayers
| Autor: | Zhendong Chen, Fusheng Ma, Zizhao Pan, Mangyuan Ma |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Kerr effect Condensed matter physics Field (physics) Spintronics Perpendicular magnetic anisotropy General Physics and Astronomy 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Magnetic field Magnetization 0103 physical sciences Thermal Antiferromagnetism 0210 nano-technology |
| Zdroj: | Journal of Applied Physics. 129:133901 |
| ISSN: | 1089-7550 0021-8979 |
| Popis: | Synthetic antiferromagnetic (SAF) multilayers are a kind of functional materials with great potential for spintronic devices. Many excellent properties of SAF multilayers have been widely reported in previous works. Here, we experimentally found that the magnetization switching steps n of [Pt/Co]2/Ru/[Co/Pt]4 SAF multilayers with perpendicular magnetic anisotropy are highly dependent on the temperature and magnetic field sweeping rate by magneto-optic Kerr effect and anomalous Hall resistance measurement. It is found that the contribution of the upper and lower layers of the SAF multilayers to the anomalous Hall coefficients is different. The switching steps n change from 2 to 3 by reducing the thickness of the non-magnetic spacer, decreasing the sweeping rate of the magnetic field, and increasing the temperature of the measuring environment. Our findings could provide a method to achieve multi-step magnetization switching for functional spintronic devices. |
| Databáze: | OpenAIRE |
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