Solution-processed amorphous gallium oxide gate dielectric for low-voltage operation oxide thin film transistors
| Autor: | Shasha Li, Xinan Zhang, Xian wen Sun, Guoxiang Song, Li Yuan |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science business.industry Gate dielectric Oxide Dielectric Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Amorphous solid Threshold voltage chemistry.chemical_compound chemistry Thin-film transistor 0103 physical sciences Optoelectronics Electrical and Electronic Engineering Thin film business Current density |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 32:8347-8353 |
| ISSN: | 1573-482X 0957-4522 |
| DOI: | 10.1007/s10854-021-05408-5 |
| Popis: | Here, gallium oxide (Ga2O3) thin films were investigated as gate dielectric for thin-film transistors (TFTs) using the solution process method. The optical, microstructure, morphology, oxygen vacancy defect states and electrical performance metrics of Ga2O3 thin films annealed at different stages of temperature were explored. The excellent dielectric property of amorphous Ga2O3 thin films was found, but it was deteriorated after crystallization when the annealing temperature increased. The optimized Ga2O3 thin film exhibits a low leakage current density of 1.9 × 10–6 A cm−2 at 1.5 MV cm−2 and a large dielectric constant of 10.8. Furthermore, low-voltage operation oxide TFTs were demonstrated using this optimized amorphous Ga2O3 as gate dielectric. The device exhibits excellent bias stress stability with a high mobility of 8.5 cm2/Vs, a threshold voltage of -1.4 V, a current on/off ratio of 104 and a subthreshold swing of 0.41 mV/Dec. |
| Databáze: | OpenAIRE |
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