Single-Hole Charging and Discharging Phenomena in Carbon Nanotube Field-Effect-Transistor-Based Nonvolatile Memory

Autor:	Takahiro Ohori, Satoshi Nagaso, Kazuhiko Matsumoto, Kenzo Maehashi, Yasuhide Ohno, Koichi Inoue
Rok vydání:	2010
Předmět:	Materials science business.industry Transistor General Engineering General Physics and Astronomy Nanotechnology Carbon nanotube Carbon nanotube field-effect transistor law.invention Non-volatile memory Hysteresis law Single hole Optoelectronics Node (circuits) business
Zdroj:	Japanese Journal of Applied Physics. 49:06GG13
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.49.06gg13
Popis:	We have fabricated nonvolatile memory based on top-gated carbon nanotube field-effect transistors (CNTFETs). Two kinds of insulating films, SiN x and SiO2, were deposited to control the hysteresis characteristics after the removal of water molecules around the single-walled CNT channels. The interface between the SiN x and SiO2 films is expected to act as a charge storage node of nonvolatile memory. The fabricated CNTFET-based memory devices clearly exhibited not only a memory effect but also good retention characteristics for charge storage. Furthermore, single-hole charging and discharging phenomena were clearly observed in the CNTFET-based memory devices by reducing the number of carriers trapped in the interface between the SiN x and SiO2 films. These results indicate that the CNTFET-based nonvolatile memory can be potentially used to realize single-electron memory.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e98fca273fe33c5e3fd755dd2f85f7de https://doi.org/10.1143/jjap.49.06gg13 Zobrazit plný text záznamu