Resistivity and lifetime variation along commercially grown Ga- and B-Doped Czochralski Si ingots and its effect on light-induced degradation and performance of solar cells

Autor: J. Nickerson, Vichai Meemongkolkiat, Ajeet Rohatgi, T.L. Jester, G. Crabtree, Kenta Nakayashiki
Rok vydání: 2006
Předmět:
Zdroj: Progress in Photovoltaics: Research and Applications. 14:125-134
ISSN: 1099-159X
1062-7995
Popis: A systematic study of the variation in resistivity and lifetime on cell performance, before and after light-induced degradation (LID), was performed along ∼900-mm-long commercially grown B- and Ga-doped Czochralski (Cz) ingots. Manufacturable screen-printed solar cells were fabricated and analyzed from different locations on the ingots. Despite the large variation in resistivity (0·57-2·5 Ωcm) and lifetime (100-1000 μs) in the Go-doped Cz ingot, the efficiency variation was found to be ≤0·5% with an average efficiency of ∼17·1%. No LID was observed in these cells. In contrast to the Go-doped ingot, the B-doped ingot showed a relatively tight resistivity range (0·87-1·22Ω cm), resulting in smaller spread in lifetime (60-400 μs) and efficiency (16·5-16·7%) along the ingot. However, the LID reduced the efficiency of these B-doped cells by about 1·1% absolute. Additionally, the use of thinner substrate and higher resistivity (4·3 Ω cm) B-doped Cz was found to reduce the LID significantly, resulting in an efficiency reduction of 0·5-0·6%, as opposed to >1 0% in ∼1 Ω cm ∼17% efficient screen-printed cells. As a result, Go-doped Cz cells gave 1·5 and 0·7% higher stabilized efficiency relative to 1 and 4·3 Ω cm B-doped Cz Si cells, respectively.
Databáze: OpenAIRE
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