Predicted propagation delay of Si/SiGe heterojunction bipolar ECL circuits
| Autor: | Z.A. Shafi, Peter Ashburn, G.J. Parker |
|---|---|
| Rok vydání: | 1990 |
| Předmět: |
Materials science
business.industry Heterostructure-emitter bipolar transistor Heterojunction bipolar transistor Transistor Bipolar junction transistor Electrical engineering Heterojunction Hardware_PERFORMANCEANDRELIABILITY Emitter-coupled logic Condensed Matter::Mesoscopic Systems and Quantum Hall Effect law.invention Computer Science::Hardware Architecture Computer Science::Emerging Technologies law ComputerApplications_GENERAL Hardware_INTEGRATEDCIRCUITS Physics::Accelerator Physics Optoelectronics Electrical and Electronic Engineering Homojunction business Hardware_LOGICDESIGN Common emitter |
| Zdroj: | IEEE Journal of Solid-State Circuits. 25:1268-1276 |
| ISSN: | 0018-9200 |
| DOI: | 10.1109/4.62151 |
| Popis: | A comparison between the predicted propagation delays of ECL (emitter coupled logic) circuits composed of Si/SiGe heterojunction and silicon homojunction bipolar transistors is presented. Important transistor parameters such as the current gain, base transit time, base resistance, and emitter delay are calculated for the heterojunction transistor as a function of the Ge concentration in the SiGe base. This allows the important design tradeoffs for the heterojunction device to be identified. The calculations show that a Ge concentration of 12% is sufficient to allow the reversal of the usual emitter and base doping concentrations in a transistor with a base width of 0.02 mu m. The resulting transistor has a gain of >50 and an emitter delay of > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|