Resistance switching for RRAM applications

Autor: Lijie Zhang, Shyh-Shyuan Sheu, Wen-Hsing Liu, Heng-Yuan Lee, Yu-Sheng Chen, Ru Huang, Ming-Jinn Tsai, Wei-Su Chen, SuMin Wang, Chen-Han Tsai, Pang-Shiu Chen, Frederick T. Chen, Yen-Ya Hsu, Pei-Yi Gu
Rok vydání: 2011
Předmět:
Zdroj: Science China Information Sciences. 54:1073-1086
ISSN: 1869-1919
1674-733X
DOI: 10.1007/s11432-011-4217-8
Popis: Resistive random access memory (RRAM or ReRAM) is a non-volatile memory (NVM) technology that consumes minimal energy while offering sub-nanosecond switching. In addition, the data stability against high temperature and cycling wear is very robust, allowing new NVM applications in a variety of markets (automotive, embedded, storage, RAM). Based on sudden conduction through oxide insulators, the characteristics of RRAM technology have still yet to be fully described. In this paper, we present our current understanding of this very promising technology.
Databáze: OpenAIRE
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