Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2 for High-Density Nonvolatile Memory
| Autor: | K.-Y. Hsiang, T.-C. Chen, C.-Y. Liao, Chun-Yu Lin, F.-C. Hsieh, J.-H. Liu, C.-F. Lou, S.-H. Chiang, Chang-Yun Chang, S.-H. Chang, Min-Hung Lee |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science business.industry chemistry.chemical_element High density Insulator (electricity) 01 natural sciences Ferroelectricity Electronic Optical and Magnetic Materials Non-volatile memory Erbium chemistry Logic gate 0103 physical sciences Optoelectronics Electrical and Electronic Engineering business Tin Monoclinic crystal system |
| Zdroj: | IEEE Electron Device Letters. 42:617-620 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | A double-HZO (HfZrO2) FeFET (ferroelectric FET) with nonidentical ferroelectric thicknesses is experimentally demonstrated with as low as $\vert {V}_{P/{E}}\vert = {5}$ V, 2-bit endurance > 105 cycles and retention > 104 s. Inserting an insulator to separate the ferroelectric layers and avoid the monoclinic formation of a thick Fe-HZO (ferroelectric-HZO) is a useful method to enhance the MW (memory window) for MLC (multilevel cell) applications. Double-HZO has a lower ER (error rate) and shows a 600X improvement compared to single-HZO. The stacked HZO FeFET has potential as an MLC for high-density NVM (nonvolatile memory) applications. |
| Databáze: | OpenAIRE |
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