Epitaxial Growth of Heterovalent GaAs/Ge and Applications in III-V Monolithic Integration on Si Substrates

Autor:	Michael J. Mori, Kamesh Chilukuri, Carl L. Dohrman, Eugene A. Fitzgerald
Rok vydání:	2006
Předmět:	Materials science business.industry Optoelectronics business Epitaxy
Zdroj:	ECS Transactions. 3:561-568
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.2355853
Popis:	We review past and present work regarding epitaxial growth of GaAs on Ge surfaces. Early work in molecular beam epitaxy showed that substrate off-cut was a critical factor, although later work with gas-source molecular beam epitaxy and chemical vapor deposition revealed that interface initiation equally controlled GaAs epitaxial layer quality. Using SiGe buffer layers to produce Ge on Si, and GaAs/Ge interfaces with optimal epitaxial control, various minority carrier devices have been fabricated over the past 5 years. To allow the co- habitation of such devices with silicon CMOS in a true monolithic technology, a new substrate platform has been created to allow for the integration of these III-V devices within a Si CMOS fabrication environment.
Databáze:	OpenAIRE
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