Electrical characterization of ZnSe epitaxial layer reactive‐ion‐etched by a gas mixture of ethane and hydrogen

Autor:	M. Nunoshita, M. Imaizumi, Y. Endoh, Muneyoshi Suita, Toshiro Isu, Kenichi Ohtsuka
Rok vydání:	1994
Předmět:	Materials science Hydrogen Inorganic chemistry Analytical chemistry General Physics and Astronomy chemistry.chemical_element Epitaxy Characterization (materials science) Ion chemistry Electrical resistivity and conductivity Etching (microfabrication) Reactive-ion etching Layer (electronics)
Zdroj:	Journal of Applied Physics. 75:8231-8233
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.356530
Popis:	The sheet resistances of ZnSe epitaxial layers etched by reactive ion etching (RIE) with use of a gas mixture of ethane and hydrogen were measured. The results showed that a high resistivity region was introduced by RIE. Characterization was done by transforming the measured resistances to the electrically active thickness estimated from the resistivity of as‐grown ZnSe layers. The estimated electrically active thicknesses were smaller than the thickness of ZnSe epitaxial layers remaining after RIE, for both p‐ and n‐ZnSe. The influence of heat treatment and current injection on the high resistivity regions differed between p‐ and n‐ZnSe.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e968d52e6c97a0c0a28937e63dd48e08 https://doi.org/10.1063/1.356530 Zobrazit plný text záznamu