In situ control of SiOx composition by spectroscopic ellipsometry

Autor:	S. Fisson, G. Vuye, C.-C. Kao, Josette Rivory, Bruno Gallas
Rok vydání:	2003
Předmět:	In situ Materials science Mechanical Engineering Analytical chemistry chemistry.chemical_element Condensed Matter Physics Evaporation (deposition) Oxygen Atmosphere chemistry Mechanics of Materials Ellipsometry General Materials Science Composition (visual arts) Thin film Electron gun
Zdroj:	Materials Science and Engineering: B. 105:205-208
ISSN:	0921-5107
DOI:	10.1016/j.mseb.2003.08.046
Popis:	This paper presents a study on the growth of SiO x thin films deposited by electron gun evaporation of SiO under O 2 reactive atmosphere. The composition x of the films was determined by spectroscopic ellipsometry using the random bonding model (RBM) provided that the parameters used in the original model of Aspnes and Theeten [J. Appl. Phys. 50 (1979) 4928] were adapted to the growth conditions. The composition depended mainly on the flux ratio of the species arriving on the surface. This model had to be slightly modified to take into account the composition of the films evaporated without oxygen, exhibiting a x value of 1.2 instead of 1, and the incorporation of O 2 in the growing film.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e963ff311bf9360a1a577d54dbe6dded https://doi.org/10.1016/j.mseb.2003.08.046 Zobrazit plný text záznamu Full Text from ScienceDirect