Effect of SET temperature on data retention performances of HfO2-based RRAM cells
| Autor: | P. Blaise, Serge Blonkowski, Ch. Muller, E. Vianello, H. Grampeix, S. Jeannot, M. Guillermet, E. Jalaguier, G. Molas, Marc Bocquet, Philippe Candelier, S. Denorme, L. Pemiola, O. Cueto, T. Cabout, J. F. Nodin |
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| Rok vydání: | 2014 |
| Předmět: |
010302 applied physics
Materials science business.industry High density Nanotechnology 01 natural sciences Resistive random-access memory Set (abstract data type) Protein filament 0103 physical sciences Conductive filament Optoelectronics Thermal stability Data retention 010306 general physics business Electrical conductor |
| Zdroj: | 2014 IEEE 6th International Memory Workshop (IMW). |
| Popis: | In this paper the effect of SET temperature on data-retention performances in HfO 2 -based RRAM has been thoroughly investigated. We demonstrated, for the first time to our knowledge, that high temperature programming (even if it has no influence on the initial resistance) has a strong effect on thermal stability of the conductive filaments. Moreover, we highlighted the impact of SET temperature also on RESET characteristics. We gathered all these experimental evidences under a simple modeling of the filament morphology, proving that the filament size might be tuned by adjusting the programming temperature. We conclude that reducing the conductive filament diameter while keeping high density of the oxygen vacancies significantly improves data retention. |
| Databáze: | OpenAIRE |
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