'Switching of high-power current pulses up to 250 kA and submillisecond duration using new silicon devices-reverse switched dinistors'

Autor:	V.I. Kovtun, G.N. Chumakov, V.A. Martynenko, I.V. Galakhov, V.M. Osin, V.I. Zolotovski, D. Larson, S.N. Gudov, V. M. Murugov, Gennadi A. Kirillov
Rok vydání:	2002
Předmět:	Microsecond Materials science Hardware_GENERAL business.industry Pulse generator Electrical engineering Thyristor Semiconductor device Power factor business Power (physics) Electronic circuit Voltage
Zdroj:	Digest of Technical Papers. Tenth IEEE International Pulsed Power Conference.
DOI:	10.1109/ppc.1995.599761
Popis:	Power switches based on silicon semiconductor devices-reverse switched dinistors are proposed to switch high-power pulsed currents of microsecond and submillisecond duration. The switch design is described for the operating voltage of up to 25 kV and operating current of up to 200 kA with the current pulses duration of 500 /spl mu/s at 0.11/sub max/. The authors give the test results and estimate the possibility of using such a switch in the NIF capacitor bank.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e959ce18575c8546c62a6bd647f1fcb4 https://doi.org/10.1109/ppc.1995.599761 Zobrazit plný text záznamu