Group analysis of the drift–diffusion model for quantum semiconductors

Autor: L. R. Galiakberova, Elena D. Avdonina, Raisa Khamitova, Nail H. Ibragimov
Rok vydání: 2015
Předmět:
Zdroj: Communications in Nonlinear Science and Numerical Simulation. 20:74-78
ISSN: 1007-5704
Popis: In the present paper a quantum drift–diffusion model describing semi-conductor devices is considered. New conservation laws for the model are computed and used to construct exact solutions.
Databáze: OpenAIRE