Combined XRR and RS Measurements of Nickel Silicide Films

Autor:	C. Wyon, D. K. Agnihotri, J. P. Formica, F. Cacho, Y. Tsach, L. F. Tz. Kwakman, J.‐P. Gonchond, G. Rolland, G. Braeckelmann
Rok vydání:	2005
Předmět:	X-ray reflectivity Crystallography chemistry.chemical_compound Materials science chemistry Annealing (metallurgy) Electrical resistivity and conductivity X-ray crystallography Silicide Analytical chemistry Wafer Thin film Sheet resistance
Zdroj:	AIP Conference Proceedings.
ISSN:	0094-243X
DOI:	10.1063/1.2062960
Popis:	X ray reflectivity (XRR) is shown to be well suited to measure the thickness of NiSi films annealed at different temperatures. The phase transformation during the silicide reaction at different spike annealing temperatures (310°C–450°C) has been characterized by measuring the sheet resistance (Rs). Combining Rs and XRR measurements, the resistivity of the nickel silicide is deduced, showing a factor ∼3 difference between the high‐resistivity Ni2Si phase and the low‐resistivity NiSi phase. A measured 49‐point contour map shows wafer non‐uniformity
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e952200d05c9af4f186ab6192c1c7e6f https://doi.org/10.1063/1.2062960 Zobrazit plný text záznamu