Characteristics of some (MOD) thin film layer type compounds in the bismuth titanate-lead titanate system
| Autor: | Adolph L. Micheli, J. V. Mantese, Norman W. Schubring |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Materials science
biology Bismuth titanate chemistry.chemical_element Mineralogy Condensed Matter Physics biology.organism_classification Ferroelectricity Titanate Electronic Optical and Magnetic Materials Bismuth Aurivillius chemistry.chemical_compound chemistry Chemical engineering Control and Systems Engineering Materials Chemistry Ceramics and Composites Lead titanate Electrical and Electronic Engineering Thin film Layer (electronics) |
| Zdroj: | Integrated Ferroelectrics. 12:1-9 |
| ISSN: | 1607-8489 1058-4587 |
| DOI: | 10.1080/10584589608225743 |
| Popis: | Layer type Aurivillius compounds of complex ferroelectric bismuth oxides have become important as thin films for nonvolatile, random-access memories(DRAMS). This paper reports the investigation of the formation of these compounds and their electrical properties, in the bismuth titanate-lead titanate system. Films were formed using the metallo-organic decomposition (MOD) spin-on solution process. These solutions were spun onto a platinized Si substrate and then fired at 700°C to form 1 μm thick films of bismuth titanate and lead titanate. The films were analyzed using microprobe and x-ray diffraction analyses. Next, the solutions were blended to give compounds from m = 4 to m = 7; where m is defined as the potential number of perovskite-like units between (Bi2O2)+2 layers. The blended solutions were processed exactly like the bismuth titanate and lead titanate solutions. X-ray diffraction analysis was used to determine if Aurivillius layer compounds were formed. Ferroelectric hysteresis loops were... |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|