Silicon/III–V material active layer heterointegrated vertical PIN waveguide photodiode by direct bonding

Autor:	Eiji Higurashi, Masakazu Sugiyama, Ling-Han Li, Yoshiaki Nakano, Ryo Takigawa, Akio Higo
Rok vydání:	2011
Předmět:	Materials science Silicon business.industry Doping chemistry.chemical_element Silicon on insulator Direct bonding Gallium arsenide Active layer Photodiode law.invention chemistry.chemical_compound chemistry law Optoelectronics Quantum efficiency business
Zdroj:	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference.
DOI:	10.1109/transducers.2011.5969752
Popis:	A silicon/III–V material active layer heterointegrated vertical PIN waveguide photodiode was developed and realized by silicon MEMS process and plasma assisted direct bonding. The InGaAsP Multiple Quantum Well (MQW) was integrated onto a SOI platform with highly doped micro rib by O 2 /Ar plasma assisted bonding which greatly improves the electrical property between the heterointerface. The photon-electron conversion of the photodiode was successfully demonstrated. The waveguide photodiode shows around 50% quantum efficiency at 1550nm and TE polarization.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e94dbc93dbe93b07e7a13462aebbbaaa https://doi.org/10.1109/transducers.2011.5969752 Zobrazit plný text záznamu