Photoluminescence properties of ZnSnP 2 single crystals

Autor:	Mutsumi Sugiyama, Keisuke Miyauchi, Hisayuki Nakanishi, Takehiro Minemura, Sho Shirakata, Keigo Nakatani
Rok vydání:	2009
Předmět:	Photoluminescence Condensed matter physics Chemistry Pl spectra Vacancy defect Analytical chemistry Ionization energy Condensed Matter Physics Spectral line
Zdroj:	physica status solidi c. 6:1116-1119
ISSN:	1610-1642 1862-6351
DOI:	10.1002/pssc.200881170
Popis:	Photoluminescence (PL) spectra of bulk ZnSnP2 crystals grown by solution growth (SG) and normal freezing (NF) methods are described. The donor-acceptor pair (DAP) transition, which possibly originates from the transition from Sn levels at Zn sites (SnZn) to Zn vacancy (VZn) levels, is observed in the crystals grown by the SG method. The PL spectra of the crystals grown by the NF method exhibit free-to-bound transitions. Ionization energies of the SnZn and VZn levels are estimated to be approximately 110 and 40–50 meV, respectively. These results are the first step toward realizing novel functions of optical devices using ZnSnP2. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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