Lamellar-structured Ni-silicide film formed by eutectic solidification
| Autor: | Yun Jae Lee, Bosung Kim, Hyoungsub Kim, Hyung-Ik Lee, Joong Jung Kim, Seongpyo Hong, Younheum Jung, Taejin Park, Jinyong Kim, Sungho Lee, Jung Yeon Won, Eunha Lee, Yihwan Kim, Cheol-Woong Yang, Seongheum Choi, Ki-Hyun Hwang, Jin-Bum Kim |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Mechanical Engineering Metals and Alloys 02 engineering and technology Substrate (electronics) 010402 general chemistry 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences 0104 chemical sciences chemistry.chemical_compound chemistry Mechanics of Materials Silicide Materials Chemistry Lamellar structure Nanometre Thin film Composite material 0210 nano-technology Supercooling Eutectic system |
| Zdroj: | Journal of Alloys and Compounds. 771:124-130 |
| ISSN: | 0925-8388 |
| Popis: | Pt-doped NiSi‒NiSi2 thin films in a uniform lamellar structure with a periodicity on the scale of a few tens of nanometers were formed on Si(001) substrates using a continuous laser scanning process. When the Pt-doped NiSi film was melted at high temperatures and was supercooled at high solidification rates (a high scanning speed of over 200 mm/s), a NiSi‒NiSi2 lamellar structure evolved while interacting with the underlying Si substrate and following the classical eutectic solidification path. The lamellar spacing could be easily controlled by the laser scanning speed. In addition, the periodically formed, nearly single-crystalline NiSi and NiSi2 phases exhibited epitaxial relationships with each other and also with the Si(001) substrate. It is believed that this novel NiSi‒NiSi2 lamellar structure can be used as a template for application areas requiring an electrode with a line/space pattern on the scale of a few tens of nanometers that can be prepared without using costly photolithographic processes. |
| Databáze: | OpenAIRE |
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