On the limiting efficiency for silicon heterojunction solar cells
| Autor: | Miao Yang, Xiaoning Ru, Qu Minghao, Shi Yin, Liang Fang, Peng Fuguo, Hongfeng Lin, Xixiang Xu, Long Wei |
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| Rok vydání: | 2021 |
| Předmět: |
Work (thermodynamics)
Materials science Silicon Renewable Energy Sustainability and the Environment business.industry chemistry.chemical_element Limiting Substrate (electronics) Upper and lower bounds Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention chemistry law Electrical resistivity and conductivity Solar cell Silicon heterojunction Optoelectronics business |
| Zdroj: | Solar Energy Materials and Solar Cells. 231:111291 |
| ISSN: | 0927-0248 |
| Popis: | Silicon heterojunction (SHJ) solar cell, as one of the promising technologies for next-generation passivating contact solar cells, employs an undiffused and n-type mono-crystalline silicon (c-Si) substrate and two amorphous-silicon-based selective contacts with opposite polarities. In this work, a numerical model based on Richter's theory has been developed to simulate the performances of a 25.11 % efficiency SHJ solar cell obtained recently. Analyses on series resistivity (Rs) explicit that the upper bound for the sum of contact resistivities for p-type (ρc,p) and n-type (ρc,n) contacts is 0.073 Ω cm2. With the updated contact resistivities, the theoretical limiting efficiency estimated by Brendel's formulation is therefore 28.5 % for SHJ solar cells, which is comparable to 28.7 % for bi-facial tunneling-oxide passivating contact (TOPCon) solar cells. A hybrid structure consisting of p-type contact from SHJ and n-type contact from TOPCon is feasible to reach 28.9 % limiting efficiency in principle, showing potential of solar cells with hybrid structures. |
| Databáze: | OpenAIRE |
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