| Autor: |
D. Hao, Wladek Walukiewicz, Lester F. Eastman, William J. Schaff, Xiaodong Chen, K. D. Matthews, Joel W. Ager, Kin Man Yu |
| Rok vydání: |
2008 |
| Předmět: |
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| Zdroj: |
2008 33rd IEEE Photovolatic Specialists Conference. |
| ISSN: |
0160-8371 |
| DOI: |
10.1109/pvsc.2008.4922690 |
| Popis: |
In x Ga 1-x N and In x Al 1-x N alloys are grown via MBE on sapphire substrates. A hole concentration of 7.7×1017 cm−3 is achieved on Mg-doped In 0.04 Ga 0.96 N. When x≫0.11, the Hall samples exhibit strong n-type polarity, whereas p-type polarity is confirmed by hot probe measurement for all Mg-doped InGaN and InAlN samples. Single p-i-n junction solar cells made of the same In x Ga 1-x N alloy composition are developed. Upon illumination by a 325 nm laser, V oc is measured at 2.5 V with a fill factor of 61% for all-GaN cell. Clear photo-responses are also observed in InGaN cells with 0.2 and 0.3 Indium content when illuminated by focused outdoor sunlight. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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