| Autor: |
D. Habets, Andrea Illiberi, Edwin H. A. Beckers, A.C. Janssen, J. van Deelen, B. Kniknie, P.J.P.M. Simons, Henk Steijvers |
| Rok vydání: |
2011 |
| Předmět: |
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| Zdroj: |
2011 37th IEEE Photovoltaic Specialists Conference. |
| Popis: |
The results presented in this paper show that highly conductive and transparent ZnO x :Al films can be grown on glass by a high throughput industrial CVD process at atmospheric pressure. Amorphous silicon p-i-n solar cells have been grown on as deposited ZnO x :Al films in order to demonstrate the suitability of this material as front contact for thin silicon film solar cells. Aluminum doped ZnO x (ZnO x :Al) films have been deposited on glass in an in-line industrial-type reactor by a metalorganic chemical vapor deposition process at atmospheric pressure. Tertiary-butanol has been used as oxidant for diethylzinc and trimethylaluminium as dopant gas. ZnO x :Al films can be grown at very high deposition rates of ∼ 14 nm/s for a substrate speed from 150 mm/min to 500 mm/min. The electrical, structural (crystallinity and morphology) and optical properties of the deposited films have been characterized by using Hall, four point probe, X-ray diffraction, atomic force microscope and spectrophotometer, respectively. All the films have c-axis, (002) preferential orientation and good crystalline quality. ZnO x :Al films are highly conductive (R 80%). Amorphous silicon p-i-n solar cells have been grown on as deposited ZnO x :Al films, without optimizing the surface texturing of ZnO x :Al films to enhance light scattering. An initial efficiency of approximately 8% has been achieved. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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